| Autor: |
G. L. Bona, N. Cahoon, Melvin K. Benedict, G. Sasso, K. Datwyler, Otto Voegeli, A. Moser, Peter Vettiger, P. Wolf, H.K. Seitz, P. Buchmann, H. P. Dietrich, David J. Webb |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2886 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.585619 |
| Popis: |
A new approach for large‐scale semiconductor laser fabrication is presented. In this ‘‘full‐wafer processing and testing’’ concept, the mirrors are fabricated, not by cleaving the wafer but by forming them by means of a chemically assisted ion beam etching process. This allows for on‐wafer mirror passivation and testing of the finished devices. Full‐wafer technology changes the traditional way of discrete device fabrication and testing to a method more akin to today’s very large‐scale integrated (VLSI) technology. Consequently, it provides similar advantages in cost and throughput. Additionally, it allows other electrical and electro‐optical device components to be monolithically integrated on the wafer. Currently, we are routinely fabricating AlGaAs/GaAs diode lasers with a single quantum well graded index separate confinement heterostructure (SQW‐GRINSCH)‐type ridge structure using full‐wafer technology. Such lasers exhibit excellent beam properties in single mode up to at least 50 mW output power. Thei... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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