A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)

Autor:	Hyungcheol Shin, Il Han Park, Kang-yoon Lee, Tae Hun Kim, Hoon Jeong, Byung-Gook Park, Jun Seo, Kyoungyong Cho, Seong-Goo Kim, Jong Duk Lee, Ki-whan Song, Yeun Seung Lee
Rok vydání:	2007
Předmět:	Vertical channel Engineering Dynamic random-access memory business.industry Cell Electrical engineering Memory operation Integrated circuit Computer Science Applications law.invention medicine.anatomical_structure law Scalability MOSFET medicine Electrical and Electronic Engineering business Dram
Zdroj:	IEEE Transactions On Nanotechnology. 6:352-357
ISSN:	1536-125X
Popis:	We propose a surrounding gate MOSFET with vertical channel (SGVC cell) as a 1T DRAM cell. To confirm the memory operation of the SGVC cell, we simulated its memory effect and fabricated the highly scalable SGVC cell. According to simulation and measurement results, the SGVC cell can operate as a 1T DRAM having a sufficiently large sensing margin. Also, due to its vertical channel structure and common source architecture, it can readily be made into a 4F2 cell array
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a888ac8b7d178e20c8a45d3f98a165ac https://doi.org/10.1109/tnano.2007.893575 Zobrazit plný text záznamu