Preparation and characterization of ion beam sputtered graphitic carbon nitride thin film
| Autor: | J. Futter, John Kennedy, F. Fang, R. Sharath, William J. Trompetter |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Ion beam analysis Nanostructure Materials science Ion beam business.industry Graphitic carbon nitride 02 engineering and technology 021001 nanoscience & nanotechnology Rutherford backscattering spectrometry 01 natural sciences chemistry.chemical_compound chemistry Sputtering Nuclear reaction analysis 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business |
| Zdroj: | Materials Today: Proceedings. 36:488-491 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2020.05.147 |
| Popis: | Ion beam sputtering is a versatile technique to create nanostructured thin films with precise control over process parameters. We report the properties of graphitic carbon nitride (g-C3N4) thin films deposited by ion beam sputtering. Ion beam analysis methods including Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Particle Induced X-ray Emission (PIXE) were used for quantitative determination of composition, thickness, elemental depth profile and trace, major elements and impurities. It was found that by directly using compressed g-C3N4 powders as the sputter target material and tuning the process parameters, g-C3N4 thin films with well controlled deposition rate were obtained. Post-annealing above 250 °C under argon atmosphere for 30 min was needed to recrystallize the g-C3N4 nanostructure. Our results suggest that ion beam sputtering technique is a promising method to obtain uniform and high-quality g-C3N4 thin films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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