Improvement of Photo-Misalignment in Patterned Wafer Bonding Process for Silicon-on-Insulator Device

Autor:	Gi–Ho Cha, Il-Kwon Kim, Moonyong Lee, Ki–Hong Lee, Geum–Jong Bae, Sang-In Lee, Kyung Wook Lee
Rok vydání:	1999
Předmět:	Wire bonding Materials science business.industry Wafer bonding General Engineering Process (computing) General Physics and Astronomy Silicon on insulator Thermocompression bonding Stress (mechanics) Anodic bonding Optoelectronics Wafer business
Zdroj:	Japanese Journal of Applied Physics. 38:3487
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.38.3487
Popis:	We have found that the photo-misalignment problem in patterned and bonded silicon-on-insulator (PBSOI) was closely related to the bonding process. We examined the stress effect on photo-misalignment using a vacuum bonding system. Photo-misalignment was critically dependent on the distance between bonding plates. Good alignment, which is less than 0.1 µm and has uniform direction within a wafer, could be achieved with a 1.4 mm separation width between bonding plates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a87ee51fec57bc357cd585fbaf2b147f https://doi.org/10.1143/jjap.38.3487 Zobrazit plný text záznamu