Origin ofn‐type conduction at the interface between epitaxial‐grown layer and InP substrate and its suppression by heating in phosphine atmosphere
| Autor: | Toshiyuki Maruyama, Ishikawa Hideto, Shiro Miwa, Mikio Kamada |
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| Rok vydání: | 1992 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 71:3898-3903 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.350857 |
| Popis: | The origin of unintentionally introduced n‐type conduction at the interface of epitaxially grown layer‐InP substrate is identified. From the relation between the sheet carrier concentration and the etching depth, an n‐type conducting layer was found at the epitaxial layer‐substrate interface. The sheet carrier concentration and the sheet Si concentration at the surface of the InP substrate, which was obtained by secondary ion mass spectrometry analysis, agreed well. As a result, we determined that the Si atoms caused n‐type conduction. To make clear that origin of the Si atoms, the following possibilities were investigated. One possibility was the vessel made from silicon dioxide (SiO2), which was used for etching the substrates, but it was determined not to be the cause because no significant difference was observed between a teflon or polypropylene vessel. To investigate the contamination from the air, we used metalorganic chemical vapor deposition to prepare a sample composed of a InP capping layer reg... |
| Databáze: | OpenAIRE |
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