Impact of technology trends on SEU in CMOS SRAMs

Autor:	G.L. Hash, F.W. Sexton, Paul E. Dodd, Bruce L. Draper, A.J. Farino, Richard S. Flores, Marty R. Shaneyfelt
Rok vydání:	1996
Předmět:	Nuclear and High Energy Physics Hardware_MEMORYSTRUCTURES Nuclear Energy and Engineering CMOS Computer science Electronic engineering Hardware_PERFORMANCEANDRELIABILITY Static random-access memory Electrical and Electronic Engineering Technology development Upset Semiconductor storage devices
Zdroj:	IEEE Transactions on Nuclear Science. 43:2797-2804
ISSN:	1558-1578 0018-9499
Popis:	The impact of technology trends on the SEU hardness of epitaxial CMOS SRAMs is investigated using three-dimensional simulation. We study trends in SEU susceptibility with parameter variations across and within technology generations. Upset mechanisms for various strike locations and their dependence on gate-length scaling are explored. Such studies are useful for technology development and providing input for process and design decisions. An application of SEU simulation, to the development of a 0.5-/spl mu/m radiation-hardened CMOS SRAM is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a8702cc2cf254e02056ac295f38759f3 https://doi.org/10.1109/23.556869 Zobrazit plný text záznamu