Growth of Direct Bandgap Ge1−xSnx Alloys by Modified Magnetron Sputtering
| Autor: | Li Qian, Weijun Fan, Ji Sheng Pan, Jinchao Tong, Dao Hua Zhang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Photoluminescence business.industry Band gap 02 engineering and technology Sputter deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Gallium arsenide chemistry.chemical_compound 020210 optoelectronics & photonics chemistry X-ray photoelectron spectroscopy Sputtering 0202 electrical engineering electronic engineering information engineering Optoelectronics Direct and indirect band gaps Electrical and Electronic Engineering Thin film business |
| Zdroj: | IEEE Journal of Quantum Electronics. 56:1-4 |
| ISSN: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2019.2956347 |
| Popis: | We report the growth of direct bandgap single-crystalline Ge1−xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1−xSnx thin films were deposited on Si, Ge, and GaAs substrates at room temperature. They were characterized by X-ray diffraction and X-ray photoelectron spectroscopy that revealed the existence of Ge1−xSnx (004) peak and Ge-Sn bonds. Transmission and photoluminescence (PL) measurements confirm the direct bandgap dominated transition, and the bandgap values obtained are in agreement with the results calculated by 8-band k.p method. This article provides a simple and cost-effect way for fabrication direct bandgap GeSn films. |
| Databáze: | OpenAIRE |
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