Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide
| Autor: | A. Winnaker, Roland Weingärtner, L Montañez, J. A. Guerra, J A Töfflinger, K. Tucto, J R Angulo |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Absorption spectroscopy Annealing (metallurgy) business.industry Band gap Mechanical Engineering Nanocrystalline silicon 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Amorphous solid chemistry.chemical_compound chemistry Mechanics of Materials 0103 physical sciences Silicon carbide Optoelectronics General Materials Science Thin film 0210 nano-technology business Absorption (electromagnetic radiation) |
| Zdroj: | MRS Advances. 1:2929-2934 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2016.422 |
| Popis: | A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum. In principle, our model is applicable to any amorphous material and it allows the determination of the bandgap. Here we focus on the bandgap engineering of amorphous hydrogenated silicon carbide layers. Emphasis is given on the role of hydrogen dilution during the deposition process and post deposition annealing treatments. Using the conventional Urbach and Tauc equations, it was found that an increase/decrease of the Urbach energy produces a shrink/enhancement of the Tauc-gap. On the contrary, the here proposed model provides a bandgap energy which behaves independently of the Urbach energy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink