Wavelength-Tunable Band-Edge Photoluminescence of Nonstoichiometric Ag–In–S Nanoparticles via Ga3+ Doping
| Autor: | Dharmendar Kumar Sharma, Tatsuya Kameyama, Martin Vacha, Marino Kishi, Chie Miyamae, Susumu Kuwabata, Shuzo Hirata, Taro Uematsu, Takahisa Yamamoto, Tsukasa Torimoto |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Photoluminescence Band gap Doping Analytical chemistry Nanoparticle 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Wavelength Surface coating Quantum dot General Materials Science 0210 nano-technology Stoichiometry |
| Zdroj: | ACS Applied Materials & Interfaces. 10:42844-42855 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.8b15222 |
| Popis: | The nonstoichiometry of I–III–VI semiconductor nanoparticles, especially the ratio of group I to group III elements, has been utilized to control their physicochemical properties. We report the solution-phase synthesis of nonstoichiometric Ag–In–S and Ag–In–Ga–S nanoparticles and results of the investigation of their photoluminescence (PL) properties in relation to their chemical compositions. While stoichiometric AgInS2 nanoparticles simply exhibited only a broad PL band originating from defect sites in the particles, a narrow band edge PL peak newly appeared with a decrease in the Ag fraction in the nonstoichiometric Ag–In–S nanoparticles. The relative PL intensity of this band edge emission with respect to the defect-site emission was optimal at a Ag/(Ag + In) value of ca. 0.4. The peak wavelength of the band edge emission was tunable from 610 to 500 nm by increased doping with Ga3+ into Ag–In–S nanoparticles due to an increase of the energy gap. Furthermore, surface coating of Ga3+-doped Ag–In–S nanop... |
| Databáze: | OpenAIRE |
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