Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Autor:	Huicai Zhong, Greg Heuss, Veena Misra
Rok vydání:	2001
Předmět:	Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) Inorganic chemistry Gate dielectric Analytical chemistry Oxide chemistry.chemical_element Equivalent oxide thickness Dielectric law.invention chemistry.chemical_compound Capacitor chemistry law Electrode
Zdroj:	Applied Physics Letters. 78:4166-4168
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1380240
Popis:	Metal–oxide–semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and ZrO2. A large reduction in the SiO2 equivalent oxide thickness accompanied by an increase in the leakage current was observed with Hf and Zr electrodes when subjected to anneal temperatures as low as 400 °C. The reduction in electrical thickness as observed from the capacitance–voltage measurements was attributed to the combination of (a) physical thinning of the SiO2 and (b) formation of a high-K layer. A severe instability of Zr and Hf electrodes was also observed on ZrSixOy and ZrO2 dielectrics. This behavior of Zr and Hf gates was attributed to high negative enthalpy of oxide formation and high oxygen solubility resulting in the reduction of the gate dielectric and subsequent oxygen diffusion to the gate electrode.
Databáze:	OpenAIRE
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