Investigation of the amorphous‐to‐microcrystalline transition of hydrogenated silicon films by spectroscopic ellipsometry

Autor:	T. V. Herak, K. C. Kao, P. K. Shufflebotham, James Schellenberg
Rok vydání:	1988
Předmět:	Materials science Silicon business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Amorphous solid Overlayer Microcrystalline Optics chemistry Ellipsometry Volume fraction Crystallite Thin film business
Zdroj:	Journal of Applied Physics. 64:688-693
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.341962
Popis:	Spectroscopic ellipsometry and x‐ray diffraction measurements have been used to obtain structural information on hydrogenated amorphous and microcrystalline silicon thin films. The films were deposited onto quartz substrates from a microwave plasma in SiH4/H2 gas mixture. For ellipsometric data analysis, the films were modeled as multilayer structures with the dielectric response of each layer calculated as a function of the amorphous, crystallite, and void volume fractions through an effective‐medium approximation. Results indicate that the transition from amorphous‐to‐microcrystalline films is accompanied by a reduction in the material density and a significant increase in the surface roughness overlayer. X‐ray diffraction measurements estimate a higher volume fraction of crystallites as compared to that obtained from optical data.
Databáze:	OpenAIRE
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