Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications
| Autor: | S. Pinkett, Robert M. Rassel, C. Mishra, Scott K. Reynolds, Ullrich R. Pfeiffer |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Radiation
Materials science business.industry Terahertz radiation Frequency multiplier Electrical engineering Harmonic mixer Schottky diode Integrated circuit Condensed Matter Physics law.invention law Extremely high frequency Optoelectronics Electrical and Electronic Engineering business Compatible sideband transmission Electronic circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 56:364-371 |
| ISSN: | 0018-9480 |
| Popis: | This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum2 and can deliver up to 2.5 dBm at 110 GHz. |
| Databáze: | OpenAIRE |
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