Theoretical approach of the photofield emission of a degenerate semiconductor

Autor:	J. Gardes, A. Chbihi, Z. Jaber, M. Querrou, M. Dupont
Rok vydání:	2002
Předmět:	Physics Photocurrent Photoexcitation Band bending Electric field Electron Atomic physics Saturation (magnetic) Degenerate semiconductor Surface states
Zdroj:	9th International Vacuum Microelectronics Conference.
DOI:	10.1109/ivmc.1996.601767
Popis:	In a high external electric field, a strong band bending confines the electron to a surface region. In the range of field (1-10 GV/m) most of the electrons close to the surface remain at the ground level E/sub o/. The emitted current is numerically computed. The results show that the current saturation arises at higher fields. Matrix element that describes the photoexcitation of electrons is presented and photocurrent is calculated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a8407cff392a5607f90b12fda2f2faeb https://doi.org/10.1109/ivmc.1996.601767 Zobrazit plný text záznamu