Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget

Autor:	Mathieu Charbonnier, N. Benedetto, F. Fillot, C. Guedj, C. Gaumer, Eugénie Martinez, Sandrine Lhostis, Christophe Licitra, Charles Leroux
Rok vydání:	2008
Předmět:	Dipole Materials science Stack (abstract data type) X-ray photoelectron spectroscopy Ellipsometry Electron affinity Drop (liquid) Thermal Analytical chemistry Electrical measurements
Zdroj:	ECS Transactions. 16:161-169
ISSN:	1938-6737 1938-5862
Popis:	In this paper, we investigate the impact of thermal budget and HfO 2 thickness on the chemical and electronic properties of the HfO 2 /SiO 2 /S' stack. High temperature anneal at 750°C induces both the regrowth and reoxidation of the SiO 2 interfacial layer. A bias drop of 1.1 eV is observed along the whole stack via the C Is core-level shift and is ascribed both to the HfO 2 /SiO 2 interfacial dipole and to fixed charges in HfO 2 . Electrical measurements suggest a dipole strength of 0.2 eV. Ellipsometry and UV photoelectron spectroscopy are combined to deduce the HfO 2 electron affinity (1.8 ± 0.2 eV). This value does not change with increasing thermal budget or dielectric thickness. The HfO 2 /Si barrier height is estimated to be 2.1 ± 0.2 eV in agreement with previous internal photoemission results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a838515805ab44b50d039bbe55a0c032 https://doi.org/10.1149/1.2981598 Zobrazit plný text záznamu