The Role of Si-H, Si-H2 and Oxygen in the Photoluminescence of Porous Si

Autor:	A. J. Bellezza, J. M. Lavine
Rok vydání:	1992
Předmět:	Materials science Photoluminescence chemistry Passivation Analytical chemistry chemistry.chemical_element Fourier transform infrared spectroscopy Porosity Oxygen Spectral line Line (formation)
Zdroj:	MRS Proceedings. 283
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-283-293
Popis:	We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 cm-1 (Si-H) and at 912 and 2112 cm-1(Si-H2) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 cm-1. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 cm-1under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface.
Databáze:	OpenAIRE
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