Fabrication of hp 32nm resist patterns using near-field lithography
| Autor: | Yasuhisa Inao, Toshiki Ito, Takako Yamaguchi, Akira Terao, Tomohiro Yamada, Natsuhiko Mizutani, Ryo Kuroda |
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| Rok vydání: | 2007 |
| Předmět: |
Diffraction
Fabrication Materials science business.industry technology industry and agriculture Photoresist Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Mercury-vapor lamp Optics Resist law Dry etching Electrical and Electronic Engineering Thin film business Lithography |
| Zdroj: | Microelectronic Engineering. 84:690-693 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2007.01.115 |
| Popis: | Near-field lithography (NFL) has no fundamental limit such as the diffraction limit of light. However, in order to fabricate resist patterns with hp 32nm, thorough optimization of various processes are indispensable. Previously, we reported on the use of fine and ultra-thin top-layer resist, and designs and fabrication of our special masks. In this paper, the effect of the total resist thickness on the near-field distribution is analyzed by the finite-difference time domain analyses and compared with our experiments. For the fabrication of hp 32nm patterns, the total resist thickness as well as the tri-layer resist process are accordingly optimized. By the near-field exposure using an i-line mercury lamp and the dry-etching process for thin top-layer photo-resist, we have successfully fabricated the hp 32nm resist pattern of 120nm height. |
| Databáze: | OpenAIRE |
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