| Autor: |
Kwang-Sik Ko, Sanghyun Lee, Jaehee Lee, Jungsu Jin, Seonghoe Jeong, Yeounsoo Kim, Joo Won Park, In-Wook Cho, Kuemju Lee, Jina Eum |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). |
| DOI: |
10.1109/ispsd.2015.7123411 |
| Popis: |
In this paper, we developed Deep Trench structure of LDMOS instead of STI in conventional one, with 0.18um 60V BCD process. By forming vertical drift region using Deep Trench, we achieved lower Ron.sp from cell pitch shrink while BVdss does not change. As a result we achieved 76V BVdss and 49.3 mohm∗mm2 Ron.sp of low side 60V rated LDNMOS. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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