Review on the development of cryogenic silicon detectors
| Autor: | W. De Boer, L. Jungermann, M.C. Abreu, Stephen Watts, M. Zavrtanik, S. Heising, P. Sousa, Erik H.M. Heijne, Nicola D'Ambrosio, Val O'Shea, A. Esposito, P. Sonderegger, P. Rato, T. O. Niinikoski, E. Verbitskaya, E. Grigoriev, K. Borer, Marko Mikuz, S. Paul, W. Bell, S. Janos, Vladimir Cindro, Kevin M. Smith, F. Hauler, Sergio Pagano, Carlos Lourenco, S.R.H. Devine, B. Dezillie, V. Granata, L. Casagrande, Igor Konorov, C. Da Via, S. Chapuy, Klaus Peter Pretzl, V. K. Eremin, V.G. Palmieri, Z. Dimcovski, Salvatore Buontempo, G. Ruggiero, P. Berglund, Zheng Li |
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| Rok vydání: | 2001 |
| Předmět: |
Physics
Nuclear and High Energy Physics Silicon Physics::Instrumentation and Detectors business.industry Detector chemistry.chemical_element Electron Signal chemistry Radiation tolerance Silicon detector Optoelectronics High Energy Physics::Experiment Irradiation business Instrumentation Order of magnitude |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 461:150-154 |
| ISSN: | 0168-9002 |
| Popis: | In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400 μm thick “double-p” silicon detector irradiated up to 1×10 15 n/cm 2 delivers a mip signal of about 27 000 electrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and “in situ” irradiation of a pad detector during operation in the cold are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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