Detection of 10–20 keV H+, He+ ions and electrons by planar oxide passivated and ion implanted silicon diodes
| Autor: | F. Søraas, Johan Stadsnes, T.E. Hansen, Geir Anton Johansen |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Physics::Instrumentation and Detectors Preamplifier Astrophysics::High Energy Astrophysical Phenomena Oxide chemistry.chemical_element Electron Particle detector Ion Full width at half maximum chemistry.chemical_compound chemistry Atomic physics Instrumentation Diode |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 62:162-166 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/0168-583x(91)95944-9 |
| Popis: | A low noise UV-enhanced silicon photodiode has been modified into a low energy particle detector by removing the antireflection oxide layer. The electronic noise of a 100 mm 2 device and a conventional charge sensitive preamplifier has been measured to 2.3 keV FWHM at room temperature operation. The response of this detector to low energy particles has been investigated. Electrons with 10 keV initial energy looses 0.8 keV in the surface deadlayer. Further, the sum of the energy losses in the deadlayer and to nuclear collisions have been measured to about 3.8 keV for 10 keV protons and 5.4 keV protons and 5.4 keV for 12 keV He + ions |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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