CdS Thin-Film Field Effect Transistor

Autor: S. R. Jawalekar, N. Venkateswarlu, M. Kameshwar Rao
Rok vydání: 1976
Předmět:
Zdroj: IETE Journal of Research. 22:739-741
ISSN: 0974-780X
0377-2063
DOI: 10.1080/03772063.1976.11451185
Popis: In this paper, Thin-Film Field Effect Transistor (TFT) made in our laboratory using vacuum evaporation and photolithography is reported. The different parameters are calculated. When two gates cover the same source and drain electrodes, the device with the gate near the connecting pads shows saturated characteristics, but the other device fails to saturate. A simple explanation based on surface states is given for this behaviour.
Databáze: OpenAIRE