Fluorine Implantation and Residual Stresses in Polysilicon Films
| Autor: | Lyan Lowry, Paul Zschack, Robert De Angelis |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Advances in X-ray Analysis. 38:235-242 |
| ISSN: | 2631-3626 0376-0308 |
| DOI: | 10.1154/s0376030800017845 |
| Popis: | X-ray diffraction techniques were utilized to study the film stress effects in silicon wafers subjected to several processing conditions. The wafer processing matrix consisted of three thicknesses of polysilicon deposited on (100) silicon with a 25 nm layer of Si02. The polysilicon was doped with phosphorous and arsenic after which the samples were implanted with fluorine at 30 KeV at a dose of 6 × 1015 cm2. A synchrotron radiation source at Brookhaven National Laboratory on beamline X-14 was employed to determine the residual stresses in the polysilicon film by a powder diffraction technique ordinarily used on poly crystal line material X-ray rocking curve experiments were employed to determine the stress in the film from measurements of the curvature of the substrate. These two stress measurements allow the estimation of the stress gradient in the intermediate amorphous oxide layer. Correlations are made between the stress gradients, the fluorine distribution in the wafer and the electrical characteristics of the structures. |
| Databáze: | OpenAIRE |
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