Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
| Autor: | Marilyne Sousa, Youri Popoff, Daniele Caimi, Chiara Marchiori, Alexander A. Demkov, Lukas Czornomaz, Heinz Siegwart, Kristy J. Kormondy, Patrick Ponath, Stefan Abel, Florian Fallegger, Emanuele Uccelli, Jean Fompeyrine, Agham Posadas |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Condensed Matter Physics Epitaxy Ferroelectricity Atomic and Molecular Physics and Optics Pockels effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electron diffraction Barium titanate Optoelectronics Electrical and Electronic Engineering Thin film business Molecular beam Molecular beam epitaxy |
| Zdroj: | Microelectronic Engineering. 147:215-218 |
| ISSN: | 0167-9317 |
| Popis: | Display Omitted Highly crystalline BaTiO3 was integrated on Si using molecular beam epitaxy.Electro-optic response was evaluated for a-axis, c-axis, and mixed films.Increased a-axis fraction correlated with increased electro-optic response.Post-deposition oxygen anneal improved crystallinity and reduced leakage current. High-quality epitaxial BaTiO3 (BTO) on Si has emerged as a highly promising material for future electro-optic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O2 rapid thermal anneal at 600?C for 30min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure. |
| Databáze: | OpenAIRE |
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