Current scaling and electron heating between integer quantum Hall plateaus in GaAs/AlxGa1-xAs heterostructures
| Autor: | F. J. Ahlers, Hansjörg Scherer, L. Bliek, Ludwig Schweitzer, W Schlapp, R Losch |
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| Rok vydání: | 1995 |
| Předmět: |
X-ray absorption spectroscopy
Condensed matter physics Chemistry Heterojunction Quantum Hall effect Condensed Matter Physics Power law Electronic Optical and Magnetic Materials Hall effect Electrical resistivity and conductivity Materials Chemistry Electron temperature Electrical and Electronic Engineering Scaling |
| Zdroj: | Semiconductor Science and Technology. 10:959-964 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/10/7/010 |
| Popis: | The current- and temperature-dependent broadening of the resistivity peaks in the region between adjacent quantum Hall plateaus is measured in two different GaAs/AlxGa1-xAs samples. Power law behaviour is found for temperature and current scaling. Combining both results, a relation for the current-density-dependent effective electron temperature can be extracted. We find Te approximately jalpha with a current heating exponent alpha approximately=0.5. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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