| Autor: |
Rishu Chaujar, Shaveta, H. M. Maali Ahmed |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Lecture Notes in Electrical Engineering ISBN: 9789811615696 |
| DOI: |
10.1007/978-981-16-1570-2_15 |
| Popis: |
Attractive properties of GaN allow it to be used in power electronic devices in various space and defense applications like satellites and radars. In this paper, we have done a comparative study of InAlN and InGaN back barrier with conventional GaN buffer in p-GaN/AlGaN/GaN HEMT. Carrier spilling in the channel is reduced, which resulted in better 2DEG confinement in the channel. Maximum electric field in the channel is 1.17 MV/cm, that is, one order higher than conventional GaN buffer. The drain current is ~332 mA/mm with back barriers due to enhanced electron concentration in the channel. Transfer characteristics and ION/IOFF ratio are improved with back barrier. Higher ION/IOFF ratio in InAlN back barrier makes it to be more power efficient and reliable p-GaN/AlGaN/GaN device than InGaN back barrier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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