Alkali ion drift model for data retention in stacked gate structures

Autor:	Sumio Tanaka
Rok vydání:	2000
Předmět:	Surface diffusion Charge conservation Differential equation Chemistry General Physics and Astronomy Activation energy Diffusion (business) Atomic physics Alkali metal Ion Threshold voltage
Zdroj:	Journal of Applied Physics. 88:3629-3633
ISSN:	1089-7550 0021-8979
Popis:	A model for data retention in stacked gate structures has been formulated, considering that an alkali ion drift toward the negatively charged floating gate is a cause of degradation. A charge conservation law is obtained for the alkali ions, which reduces to a differential equation concerning the threshold voltage variation. A simple analytical expression for the threshold voltage variation has been obtained whose form is identical to the conventional model; however, the physical meaning is quite different. In the proposed model, the low activation energy is attributed to the potential barrier height formed by silicon dioxide atoms for alkali ions and the inconsistency in the conventional model can be solved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a7f1479b8578a989f6abcd1e2ced59af https://doi.org/10.1063/1.1285957 Zobrazit plný text záznamu