| Autor: |
P. Kulse, K. Schulz, Simone Jätzlau, Matthias Wietstruck |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
35th European Mask and Lithography Conference (EMLC 2019). |
| DOI: |
10.1117/12.2535629 |
| Popis: |
In this work we address the capability of an alternative overlay evaluation method for the entire BEOL-Process of IHP’s standard 0.25 and 0.13 μm SiGe:C BiCMOS technology. A dual lithography platform NIKON® NSR 210D/207D scanners and NIKON® NSR SF-150 i-Line stepper layer crossing and wafer bow related overlay issues will be discussed. Stack alignment marks, which serves the exposure alignment and overlay determination were introduced. A mismatch for overlay (x/y) |mean| + 3σ values below 8 nm between the KLA® ARCHER 100 overlay and both lithography tools could be demonstrated. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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