Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures

Autor: Jonathan Plentz, Martin Presselt, Ruri Agung Wahyuono, Felix Hermann-Westendorf, Jan Dellith, Benjamin Dietzek, Martin Seyring, Martin Schulz, Christa Schmidt, Markus Rettenmeyer, Andrea Dellith
Rok vydání: 2017
Předmět:
Zdroj: Chemical Physics. :112-121
ISSN: 0301-0104
Popis: Annealing treatment was applied to different mesoporous ZnO nanostructures prepared by wet chemical synthesis, i.e. nanoflowers (NFs), spherical aggregates (SPs), and nanorods (NRs). The sub-bandgap, defect properties as well as the trapping state characteristics after annealing were characterized spectroscopically, including ultrasensitive photothermal deflection spectroscopy (PDS), photoluminescence and photo-electrochemical methods. The comprehensive experimental analysis reveals that annealing alters both the bandgap and the sub-bandgap. The defect concentration and the density of surface traps in the ZnO nanostructures are suppressed upon annealing as deduced from photoluminescence and open-circuit voltage decay analysis. The photo-electrochemical investigations reveal that the surface traps dominate the near conduction band edge of ZnO and, hence, lead to high recombination rates when used in DSSCs. The density of bulk traps in ZnO SPs is higher than that in ZnO NFs and ZnO NRs and promote lower recombination loss between photoinjected electrons with the electrolyte-oxidized species on the surface. The highest power conversion efficiency of ZnO NFs-, ZnO SPs-, and ZnO NRs-based DSSC obtained in our system is 2.0, 4.5, and 1.8%, respectively.
Databáze: OpenAIRE