| Autor: |
D. Ventura, Antonio Gnudi, Giorgio Baccarani, M.C. Vecchi |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V. |
| DOI: |
10.1109/nupad.1994.343492 |
| Popis: |
Band-structure effects are incorporated in the framework of the Spherical-Harmonic Expansion (SHE) approximation of the Boltzmann Transport Equation (BTE) for electrons in silicon. The density of states (DOS) and the group velocity (GV) are modeled as energy-dependent functions obtained from the full-band system. Scattering parameters are tuned by fitting experimental and Monte Carlo data. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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