A Novel Combinatorial Approach to the Ferroelectric Properties in Hf x Zr 1− x O 2 Deposited by Atomic Layer Deposition

Autor:	Jaidah Mohan, Su Min Hwang, Jin-Hyun Kim, Dan N. Le, Jiyoung Kim, Jean François Veyan, Yong Chan Jung, Harrison Sejoon Kim, Si Joon Kim, Heber Hernandez-Arriaga, Rino Choi, Namhoon Kim, Akshay Sahota
Rok vydání:	2021
Předmět:	Atomic layer deposition Materials science X-ray photoelectron spectroscopy Annealing (metallurgy) X-ray crystallography Analytical chemistry General Materials Science Dielectric Thin film Nitride Condensed Matter Physics Ferroelectricity
Zdroj:	physica status solidi (RRL) – Rapid Research Letters. 15:2100053
ISSN:	1862-6270 1862-6254
DOI:	10.1002/pssr.202100053
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a7e2527e84b33e3e8b5ff2dd0250b15a https://doi.org/10.1002/pssr.202100053 Zobrazit plný text záznamu Plný text