Beam-induced wafering technology for kerf-free thin PV manufacturing
| Autor: | Francois J. Henley, Zuqin Liu, Sien Kang, Lu Tian, Jusong Wang, Yi-Lei Chow |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element ComputerApplications_COMPUTERSINOTHERSYSTEMS Hardware_PERFORMANCEANDRELIABILITY Substrate (electronics) Slicing law.invention Cz silicon Wafering chemistry law Solar cell Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer business Beam (structure) |
| Zdroj: | 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc.2009.5411435 |
| Popis: | A novel ion beam-induced cleaving process for slicing c-Si wafers ranging in thickness from 20µm to 150µm with near zero kerf-loss and markedly low overall cost has been developed and demonstrated to be capable of large-area thin PV substrate manufacturing. This paper introduces this new wafering technology, called the Direct Film Transfer (DFT) process, and describes its practical utilization to produce wafers spanning from ultra thin foils to free-standing substitute wafers in high-volume silicon PV cell manufacturing. In addition to the 50µm thick wafering capability, recent 20µm and 150µm wafering results complete the extension and applicability of the DFT process. The material characteristics and preliminary solar cell efficiencies of the DFT wafers are presented. With the advent of this new wafering technology, development work and production use of ultra thin CZ silicon based solar cells are expected to accelerate. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|