Lateral n–i–p junction characterization using laser microscopy
| Autor: | Louise Buckle, S Muscat, C. J. Bartlett, John H. Jefferson, Ralph Stephen Hall, Keith James Nash, S. J. Smith, Geoffrey R. Nash, M. T. Emeny, Timothy Ashley |
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| Rok vydání: | 2005 |
| Předmět: |
Photocurrent
Laser Microscopy Materials science business.industry Photoconductivity Condensed Matter Physics Signal Electronic Optical and Magnetic Materials Characterization (materials science) Amplitude Optics Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Laser beams Quantum well |
| Zdroj: | Semiconductor Science and Technology. 20:406-411 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/20/5/014 |
| Popis: | Scanning laser microscopy was used to characterize a lateral n–i–p junction formed in an InSb quantum well. Two-dimensional scans of photocurrent, measured at 77 K under illumination from either a 633 nm or 3.4 µm laser beam, showed a peak in the signal amplitude, confirming the existence of a junction close to the design position. The spatial extent of the peak amplitude signal was different with the different illumination, suggesting that the junction is located within the InSb quantum well. |
| Databáze: | OpenAIRE |
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