Possible negative‐U properties of the cation vacancy in HgCdTe

Autor:	Walter A. Harrison, Donald E. Cooper
Rok vydání:	1990
Předmět:	Condensed matter physics Deep level Silicon Doping Recombination rate Mineralogy chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Crystallographic defect Acceptor Surfaces Coatings and Films chemistry Vacancy defect Recombination
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1112-1115
ISSN:	1520-8559 0734-2101
Popis:	The cation vacancy in HgCdTe is commonly used for p‐type doping, but the energy levels of the vacancy acceptor are not known. We propose that the vacancy is a negative‐U center, with inverted energy levels. Comparison with the vacancy in silicon,which is a well‐characterized negative‐U defect, indicates that the HgCdTe vacancy is likely to be a negative‐U center also. The minority carrier recombination rate involving gap levels of the vacancy will show a quadratic dependence on the vacancy concentration, and the deep levels of a negative‐U vacancy may be particularly suitable as recombination centers due to their location near the middle of the gap.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a7daccfe0965e9ac269ae86622a420b1 https://doi.org/10.1116/1.576970 Zobrazit plný text záznamu