Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

Autor:	Taesung Jang, Hyunjun Sim, Kiju Im, Hyundoek Yang, Hye-Lan Lee, Sanghun Jeon, Sangmu Choi, Hyunsang Hwang
Rok vydání:	2002
Předmět:	Lanthanide Electron mobility chemistry.chemical_compound Materials science chemistry Gate dielectric Analytical chemistry Oxide Equivalent oxide thickness Thermal stability Evaporation (deposition) Amorphous solid
Zdroj:	International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
DOI:	10.1109/iedm.2001.979545
Popis:	In this paper, we report on an investigation of the electrical characteristics of various amorphous lanthanide oxides prepared by e-beam evaporation. Excellent electrical characteristics were found for the amorphous lanthanide oxide including a high oxide capacitance, low leakage current, and high thermal stability. We also confirmed the excellent thermal stability and mobility characteristics of lanthanide silicate (PrSi/sub x/O/sub y/). In addition, lanthanide-doped HfO/sub 2/ also exhibited a significant reduction in leakage current at the same equivalent oxide thickness.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a7c9ed7d1c8ff782eccdc0b274af4496 https://doi.org/10.1109/iedm.2001.979545 Zobrazit plný text záznamu