Stable In-defect complexes in GaN and AlN
| Autor: | Reiner Vianden, J. Penner, Katharina Lorenz, Eduardo Alves, J. Schmitz, J. Niederhausen |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Condensed matter physics Annealing (metallurgy) chemistry.chemical_element Gallium nitride Nitride Condensed Matter Physics Molecular physics Crystallographic defect Electronic Optical and Magnetic Materials chemistry.chemical_compound Ion implantation chemistry Vacancy defect Spontaneous emission Electrical and Electronic Engineering Indium |
| Zdroj: | Physica B: Condensed Matter. 404:4866-4869 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2009.08.181 |
| Popis: | Perturbed angular correlation measurements in Indium implanted GaN and AlN have shown that after annealing up to 50% of the In probes occupy relatively undisturbed substitutional group III sites at 293 K while the remaining fraction traps a nearest neighbor point defect. Above 293 K this fraction decreases strongly until, at 1100 K, all In probes are found in undisturbed substitutional sites. The effect is completely reversible. A model involving an Indium–nitrogen vacancy complex is suggested to explain this behavior. Possibly this complex can act as radiative recombination center or as seed for phase segregation during growth. |
| Databáze: | OpenAIRE |
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