Characterization of graphene synthesized by low-pressure chemical vapor deposition using N-Octane as precursor
| Autor: | Cesar D. Mendoza, Neileth S. Figueroa, A.L. Pinto, André do Nascimento Barbosa, F.L. Freire |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Graphene Bilayer Scanning tunneling spectroscopy Analytical chemistry 02 engineering and technology Chemical vapor deposition Partial pressure 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention symbols.namesake law symbols Molecule General Materials Science Scanning tunneling microscope 0210 nano-technology Raman spectroscopy |
| Zdroj: | Materials Chemistry and Physics. 219:189-195 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/j.matchemphys.2018.08.031 |
| Popis: | We report single-layer graphene synthesis using high-carbon content N-Octane as precursor. Unlike methanol, ethanol and other liquid carbon precursors, N-Octane is oxygen free and its molecular structure is simply a common hydrocarbon. Optimal precursor pressure for synthesis was found to be at 5–20 mTorr range, as at higher partial pressures we have achieved bilayer and few-layer coverage of the copper substrates with {111} plane parallel to the surface, as revealed by Raman spectroscopy. We could lower the synthesis temperature down to 850 °C and still obtained graphene layers with low concentration of defects. For the complete coverage of the substrates, we report shorter than usual synthesis time, of no more than 5 min. Characterization of graphene layers were performed using Raman scattering spectroscopy and mapping, UV–vis transmittance as well as atomic force microscopy, scanning tunneling microscopy and scanning tunneling spectroscopy. |
| Databáze: | OpenAIRE |
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