Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
| Autor: | Abhishek Vaidya, Chinmoy Nath Saha, Uttam Singisetti |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 42:1444-1447 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2021.3104256 |
| Popis: | This letter reports $\beta $ -(AlxGa1-x)2O3/Ga2O3 (AlGaO/GaO) heterostructure FETs (HFETs) with significant improvement of peak transconductance (g m), current and power gain cutoff frequencies. A modulation doping scheme is used to form a two dimensional electron gas in AlGaO/GaO heterostructures. Highly scaled transistors (gate lengths of 160–200 nm) were fabricated on these wafers with source/drain regrowth, scaled source access lengths and Pt Schottky gates. The fabricated HFETs show an enhancement-mode operation with high transconductance and a peak current density of 74 mA/mm. Small signal measurements show a peak current gain cut off frequency (fT) and power gain cutoff frequency (fmax) of 30 and 37 GHz respectively at 10 V drain voltage. While the cutoff frequencies are highest to date, they are limited by high source resistance at the regrowth interface. We observed a moderate off state breakdown at V GS = −2 V, limited by gate leakage and Schottky gate breakdown with an average field strength of 1.35 MV/cm. The fT.LG product 4.8 GHz- ${\mu }\text{m}$ reported for this device is higher than any other current generation $\beta $ -Ga2O3 transistors which paves the way for future RF device applications. |
| Databáze: | OpenAIRE |
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