Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application
| Autor: | Kunal J. Tiwari, Aryasomayajula Subrahmanyam, Vijay Vinod, P. Malar |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Band gap Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Substrate (electronics) 01 natural sciences symbols.namesake chemistry.chemical_compound Antimony Selenide 0103 physical sciences Thin film 010302 applied physics Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Copper Evaporation (deposition) Surfaces Coatings and Films chemistry symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | Applied Surface Science. 418:216-224 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2017.01.279 |
| Popis: | Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm−1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound. |
| Databáze: | OpenAIRE |
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