Simulation framework for barrier lowering in Schottky barrier MOSFETs
| Autor: | Udo Schwalke, Mike Schwarz, Tillmann Krauss, Alexander Kloes, John P. Snyder, L. E. Calvet |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky barrier Thermionic emission Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Metal–semiconductor junction 01 natural sciences Field electron emission 0103 physical sciences Electrode MOSFET Optoelectronics Current (fluid) 0210 nano-technology business Quantum tunnelling |
| Zdroj: | MIXDES |
| Popis: | In this paper we present a simulation framework to account for the Schottky barrier lowering models in SB-MOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus predict accurately the on- and off-current regions are adressed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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