Autor: |
Hyo-Joo Ahn, Jae-Young Lee, Yoon-Joo Eom, Seok-Hun Hyun, Junha Lee, Kyoung-Ho Kim, Jong-Min Bang, Yong-Cheol Bae, Hye-Ran Kim, Hoon Lee, Jong-Hyuk Kim, Joon-Young Park, Seung-Jun Shin, Ki-Han Kim, Tae-Young Oh, Hanna Park, Hyuck-Joon Kwon, Young-Ryeol Choi, Yoon-Hwan Yoon, In-Dal Song, Youn-sik Park, Su-Jin Park, Soo-bong Chang, Kwang-Il Park, Kyong-Ho Jeon, Jin-Hee Park, Jung-Sik Kim, Chang-Kyo Lee, Young Sang Choi, Yoon-Gyu Song, Hyong-Ryol Hwang, Du-Yeul Kim, Gyo-Young Jin, Ho-Jun Chang, Seong-Jin Jang, Jung-Hwan Choi, Seung-Jun Bae |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
ISSCC |
Popis: |
With growing demand for low-power mobile applications, such as wearable devices, smart phones and tablet PCs, low-power mobile DRAM has been identified as a mandatory requirement for low-power system designs. The recently developed LPDDR4 [1] is still a power efficient solution because of its architectural approaches and low-voltage-swing terminated logic (LVSTL). However, demand for enhanced power-efficiency beyond LPDDR4 is still increasing for mobile applications. In this work, a 5.0Gbp/s/pin 8Gb LPDDR4X memory with power-isolated low-voltage-swing terminated logic (PI-LVSTL) and a split-die architecture is proposed to enhance power-efficiency and mass production yield. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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