Comparison of the Sensitivity to Heavy Ions of Sram in Different Simox Technologies

Autor:	Y.M. Coic, O. Musseau, V. Ferlet-Cavrois, J.L. Leray, E. Guichard, G. Lecarval
Rok vydání:	2005
Předmět:	Random access memory Materials science CMOS business.industry Electronic engineering Optoelectronics Sensitivity (control systems) Static random-access memory business Capacitance Radiation hardening Energy exchange Ion
Zdroj:	IEEE International SOI Conference.
DOI:	10.1109/soi.1992.664794
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a791b961454c4d2f31eb8d9a0f839de7 https://doi.org/10.1109/soi.1992.664794 Zobrazit plný text záznamu