Circuit model of UTC-PD with high power and enhanced bandwidth technique

Autor:	Senjuti Khanra, Abhirup Das Barman
Rok vydání:	2014
Předmět:	Photocurrent Materials science business.industry Bandwidth (signal processing) Linearity Photodiode law.invention Inductance law Electrical network Equivalent circuit Optoelectronics business Shunt (electrical)
Zdroj:	Numerical Simulation of Optoelectronic Devices, 2014.
DOI:	10.1109/nusod.2014.6935371
Popis:	An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a78933f3b4a61bed1b78cf94adcdbffe https://doi.org/10.1109/nusod.2014.6935371 Zobrazit plný text záznamu