The study of the phase composition of polymorphous silicon film by Raman spectroscopy
| Autor: | N. S. Pshchelko, V. S. Levitskiy, A. O. Belorus, V. L. Koshevoi |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Nanocrystalline silicon chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Monocrystalline silicon Condensed Matter::Materials Science symbols.namesake chemistry Nanocrystal Condensed Matter::Superconductivity 0103 physical sciences symbols Optoelectronics Crystallite Thin film 0210 nano-technology business Raman spectroscopy Raman scattering |
| Zdroj: | 2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW). |
| Popis: | This paper presents the results of the study based on the phase composition of thin films of polymorphic silicon on various parameters of plasma chemical deposition by method of Raman spectroscopy. The phase composition of films is of great importance in the manufacture of solar cells. Raman spectroscopy allows to know the dimensions of the crystallites and their uniform distribution in the film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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