Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
| Autor: | Jesse B. Tucker, Chris S. Cowen, Richard Alfred Beaupre, Kevin Matocha |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Dielectric strength Mechanical Engineering Oxide Analytical chemistry Condensed Matter Physics law.invention Capacitor chemistry.chemical_compound Thermal oxide chemistry Mechanics of Materials law Etching (microfabrication) Thermal General Materials Science Dry etching Reactive-ion etching |
| Zdroj: | Materials Science Forum. :983-986 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.527-529.983 |
| Popis: | 4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching. |
| Databáze: | OpenAIRE |
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