A Study on Set Process and Its Influence on Performance of Resistive Switching
| Autor: | Hui-Yu Yan, Zhi-Qing Li |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Condensed matter physics Chemistry Polarity (physics) Nanotechnology 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen vacancy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory Resistive switching mental disorders 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology Low resistance Voltage |
| Zdroj: | physica status solidi (a). 214:1700546 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201700546 |
| Popis: | In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (Vset). The difference in Vset and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of Vset in devices, which comes from the influence of defects on breakdown. The resistances of low resistance state (LRS) of bipolar are much smaller than these of unipolar RS under the same current compliance. The LRS resistances of bipolar RS show complex dependence on Vset. It reveals that the oxygen vacancy (VO) filaments properties and RS types are controlled by the intrinsic properties of breakdown and remnant defects. |
| Databáze: | OpenAIRE |
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