Crystal Growth and Structural Characteristics of Preferentiallya-andb-Axis-Oriented (Bi4-xNdx)Ti3O12Films Fabricated by High-Temperature Sputtering

Autor:	Hisashi Oshima, Hitoshi Morioka, Tetsuo Yazawa, Atsushi Mineshige, Hideto Tada, Hideshi Yamaguchi, Koichiro Honda, Keisuke Saito, Akihiro Tamura, Masafumi Kobune, Yusuke Daiko, Hironori Fujisawa, Kazuki Imagawa, Masaru Shimizu
Rok vydání:	2010
Předmět:	Materials science business.industry Crystal growth Substrate (electronics) Sputter deposition Pole figure Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials Crystallography Optics Sputtering Texture (crystalline) business Layer (electronics)
Zdroj:	Ferroelectrics. 406:155-160
ISSN:	1563-5112 0015-0193
DOI:	10.1080/00150193.2010.484373
Popis:	The 3.0-μm (Bi3.25Nd0.75)Ti3O12 (BNT-0.75) films were fabricated on IrO2(101)/ Al2O3(012) substrates by high-temperature sputtering. The XRD pole figure demonstrated that a 3.0-μm BNT-0.75 film deposited on the IrO2 electrode is grown with a strong 10° off-(100)/(010) and a weak (101)/(011) orientations of threefold symmetry. The BNT films represented random orientation near the bottom IrO2 electrode and the intermediate part of the film. In the upper part of the BNT layer, the existence of a- and b-axis-oriented rod-shaped crystals with approximately 0.25 μm width were confirmed. In contrast, the BNT film deposited directly on the Al2O3(012) substrate represented almost completely a- and b-axis orientations in a whole BNT layer.
Databáze:	OpenAIRE
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