| Autor: |
J.C. Olson, Alex Eidukonis, Stan Todorov, Dennis Rodier, Frank Sinclair, Thirumal Thanigaivelan |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 20th International Conference on Ion Implantation Technology (IIT). |
| DOI: |
10.1109/iit.2014.6940037 |
| Popis: |
The continued advance of semiconductor technology, including the emergence of 3D device architectures, demands ever-increasing precision of dose and angle control in ion implantation. The Varian Semiconductor Equipment business unit of Applied Materials has enhanced the design of the industry's leading medium current implanter to meet the production requirements of advanced technology nodes. Improvements to the implanter architecture include more precise angle control, increased beam utilization, better uniformity and repeatability and longer maintenance intervals. Advanced ion optics allow measurement and control of beam shape. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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