New Efficiency Frontiers with Wafer-Bonded Multi-Junction Solar Cells
| Autor: | Tibbits, T.N.D., Beutel, P., Grave, M., Karcher, C., Oliva, E., Siefer, G., Wekkeli, A., Schachtner, M., Dimroth, F., Bett, A.W., Krause, R., Piccin, M., Blanc, N., Muñoz-Rico, M., Arena, C., Guiot, E., Charles-Alfred, C., Drazek, C., Janin, F., Farrugia, L., Hoarau, B., Wasselin, J., Tauzin, A., Signamarcheix, T., Hannappel, T., Schwarzburg, K., Dobrich, A. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20142014-4cp.2.1 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 1975-1978 Triple-junction (3J) solar cells will soon be history. The next generation of multi-junction (MJ) devices are now reaching efficiencies far beyond the record levels of 3J cells on Germanium. In this paper we present results of a 4J wafer-bonded solar cell with bandgaps 1.88 / 1.45 // 1.10 / 0.73 eV measured with an improved efficiency of 46.5% at 324x by Fraunhofer ISE. Design for cost has, from the outset, been a priority with the development of engineered substrates to replace costly and low yielding InP substrates, a product building on Soitec’s proprietary SmartCut® technology. Wafer bonding enables the electro-mechanical combination of lattice and thermal expansion mismatched materials with electrically conductive, transparent bonds, enabling concentrator solar cells to be built from high quality 2J GaInP/GaAs absorbers lattice-matched to GaAs bonded to high quality 2J GaInPAs/GaInAs absorbers lattice matched to InP that operate well at high concentration. |
| Databáze: | OpenAIRE |
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