Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer
| Autor: | Idris Bouchama, Zahir Rouabah, Samah Boudour, Nadir Bouarissa |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Fabrication
Materials science chemistry.chemical_element 02 engineering and technology 01 natural sciences Inorganic Chemistry 0103 physical sciences Work function Electrical and Electronic Engineering Physical and Theoretical Chemistry Spectroscopy 010302 applied physics business.industry Organic Chemistry Energy conversion efficiency 021001 nanoscience & nanotechnology Copper indium gallium selenide solar cells Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Solar cell efficiency Band bending chemistry Optoelectronics 0210 nano-technology business Layer (electronics) Indium |
| Zdroj: | Optical Materials. 72:177-182 |
| ISSN: | 0925-3467 |
| DOI: | 10.1016/j.optmat.2017.05.056 |
| Popis: | In this present contribution, AMPS-1D device simulator is employed to study the performances of superstrate SLG/TCO/p-Cu(In,Ga)Se 2 (CIGS)/n-ODC/n-In 2 Se 3 /Metal thin film solar cells. The impact of the TCO and Metal work functions on the cell performance has been investigated. The combination of optical transparency and electrical property for TCO front contact layer is found to yield high efficiency. The obtained results show that the TCO work function should be large enough to achieve high conversion efficiency for superstrate CIGS solar cell. Nevertheless, it is desirable for Metal back contact layer to have low work function to prevent the effect of band bending in the n-In 2 Se 3 /Metal interface. Several TCOs materials and metals have been tested respectively as a front and back contact layers for superstrate CIGS solar cells. An efficiency of 20.18%, with V oc ≈ 0.71 V, J sc ≈ 35.36 mA/cm 2 and FF ≈ 80.42%, has been achieved with ZnSn 2 O 3 -based as TCO front contact layer. In the case of SnO 2 :F front contact and indium back contact layers, an efficiency of 16.31%, with V oc ≈ 0.64 V, J sc ≈ 31.4 mA/cm 2 and FF ≈ 79.4%, has been obtained. The present results of simulation suggest an improvement of superstrate CIGS solar cells efficiency for feasible fabrication. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect