Diagnostics for plasma processing (etching plasmas) (invited)

Autor:	Noah Hershkowitz, R. A. Breun
Rok vydání:	1997
Předmět:	Materials science business.industry technology industry and agriculture Fourier transform spectroscopy Interferometry symbols.namesake Optics Etching (microfabrication) symbols Langmuir probe Plasma diagnostics Spectroscopy business Instrumentation Plasma processing Microwave
Zdroj:	Review of Scientific Instruments. 68:880-885
ISSN:	1089-7623 0034-6748
Popis:	Plasma processing diagnostics play two different roles—characterization and control. The goal of plasma characterization is to establish connections of data with external parameters and to verify models. The goal of control diagnostics is to make noninvasive in situ measurements of relevant processing parameters. Diagnostics used in semiconductor etching are considered. These include Langmuir probes, laser induced fluorescence, optical emission spectroscopy, infrared and Fourier transform infrared absorption spectroscopy, mass spectrometry, microwave interferometry, and radio frequency diagnostics. An example is given of the use of many diagnostics in characterizing SiO2 and Si etching by fluorocarbons.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a751f03d595c13143718f84ccebecddd https://doi.org/10.1063/1.1147752 Zobrazit plný text záznamu