| Autor: |
Huanhuan Wang, Xi Jie Wang, Balaji Raghothamachar, Jianqiu Guo, Hong Yan Zhang, Yan Min Zong, Yu Qiang Gao, Michael Dudley |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. 858:41-44 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.858.41 |
| Popis: |
150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was carried out to investigate the distribution of defects in axial slices cut from the boule. It was found that an increase of dislocations and micropipes was mainly induced by inclusions. After eliminating these inclusions, which were formed in the mid to late stage of the crystal growth, both the screw dislocation density and base plane dislocation density could be decreased down to a magnitude of 102 cm-2, which is comparable to that of high quality 100 mm diameter SiC substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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